JPH0216019B2 - - Google Patents

Info

Publication number
JPH0216019B2
JPH0216019B2 JP55124264A JP12426480A JPH0216019B2 JP H0216019 B2 JPH0216019 B2 JP H0216019B2 JP 55124264 A JP55124264 A JP 55124264A JP 12426480 A JP12426480 A JP 12426480A JP H0216019 B2 JPH0216019 B2 JP H0216019B2
Authority
JP
Japan
Prior art keywords
gate
polysilicon
substrate
film
diffusion layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP55124264A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5748270A (en
Inventor
Shoichi Komatsu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Priority to JP55124264A priority Critical patent/JPS5748270A/ja
Priority to NLAANVRAGE8103565,A priority patent/NL188606C/xx
Priority to GB8123805A priority patent/GB2083698B/en
Priority to FR8116853A priority patent/FR2490011B1/fr
Priority to DE19813135103 priority patent/DE3135103A1/de
Publication of JPS5748270A publication Critical patent/JPS5748270A/ja
Publication of JPH0216019B2 publication Critical patent/JPH0216019B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/74—Making of localized buried regions, e.g. buried collector layers, internal connections substrate contacts
    • H01L21/743—Making of internal connections, substrate contacts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3215—Doping the layers
    • H01L21/32155—Doping polycristalline - or amorphous silicon layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body (electrodes)
    • H01L23/485—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body (electrodes) consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
    • H01L23/4855—Overhang structure
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
JP55124264A 1980-09-08 1980-09-08 Semiconductor device Granted JPS5748270A (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP55124264A JPS5748270A (en) 1980-09-08 1980-09-08 Semiconductor device
NLAANVRAGE8103565,A NL188606C (nl) 1980-09-08 1981-07-28 Werkwijze voor het vervaardigen van een veldeffecttransistor met geisoleerde poort.
GB8123805A GB2083698B (en) 1980-09-08 1981-08-04 Semiconductor device
FR8116853A FR2490011B1 (fr) 1980-09-08 1981-09-04 Dispositif semi-conducteur
DE19813135103 DE3135103A1 (de) 1980-09-08 1981-09-04 Halbleiterbauelement

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55124264A JPS5748270A (en) 1980-09-08 1980-09-08 Semiconductor device

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP29598286A Division JPS62142335A (ja) 1986-12-12 1986-12-12 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS5748270A JPS5748270A (en) 1982-03-19
JPH0216019B2 true JPH0216019B2 (en]) 1990-04-13

Family

ID=14881022

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55124264A Granted JPS5748270A (en) 1980-09-08 1980-09-08 Semiconductor device

Country Status (5)

Country Link
JP (1) JPS5748270A (en])
DE (1) DE3135103A1 (en])
FR (1) FR2490011B1 (en])
GB (1) GB2083698B (en])
NL (1) NL188606C (en])

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04194693A (ja) * 1990-11-28 1992-07-14 Mitsui Eng & Shipbuild Co Ltd 道路空洞探査レーダシステム

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS583380B2 (ja) * 1977-03-04 1983-01-21 株式会社日立製作所 半導体装置とその製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04194693A (ja) * 1990-11-28 1992-07-14 Mitsui Eng & Shipbuild Co Ltd 道路空洞探査レーダシステム

Also Published As

Publication number Publication date
FR2490011A1 (fr) 1982-03-12
FR2490011B1 (fr) 1985-09-27
GB2083698A (en) 1982-03-24
GB2083698B (en) 1984-10-31
DE3135103C2 (en]) 1988-07-14
DE3135103A1 (de) 1982-05-06
JPS5748270A (en) 1982-03-19
NL188606B (nl) 1992-03-02
NL188606C (nl) 1992-08-03
NL8103565A (nl) 1982-04-01

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